2SC5086-Y,LF

2SC5086-Y,LF

$0.19
  • Description:RF TRANS NPN 12V 7GHZ SSM
  • Series:-

SKU:b6bdd75f22a5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 7GHZ SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1dB @ 500MHz
  • Gain:-
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 20mA, 10V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM
  • Grade:-
  • Qualification:-

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2SC5086-Y,LF

Overview

The 2SC5086-Y,LF is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. Designed for VHF to UHF band applications, it functions as a low noise amplifier. The device features a high gain characteristic with a typical S-parameter magnitude of 11dB at 1 GHz. It achieves a low noise figure of 1.1dB at the same frequency. The component utilizes a surface mount package suitable for automated assembly processes in RF circuit designs.

Feature Summary

  • Optimized for VHF and UHF band low noise amplifier applications
  • Provides high gain performance with an S-parameter magnitude of 11dB at 1 GHz
  • Delivers a low noise figure of 1.1dB at 1 GHz

Applications

  • VHF band low noise amplification circuits
  • UHF band low noise amplification circuits
  • RF front-end modules requiring high gain and low noise characteristics

Procurement Notes

Verify the part number suffix LF against official Toshiba Semiconductor and Storage documentation to confirm lead-free compliance status. Ensure the manufacturer identification matches Toshiba Semiconductor and Storage rather than generic distributors. Confirm the specific package type and marking codes align with current production standards before finalizing procurement orders.

Selection Notes

Select this component when designing circuits operating within the VHF to UHF spectrum that require minimal signal degradation. The device is appropriate for applications prioritizing a low noise figure alongside high gain. Engineers should evaluate thermal management requirements based on the specific power dissipation limits defined in the official datasheet for the chosen package configuration.

Part Context

This component belongs to the family of silicon NPN epitaxial planar transistors produced by Toshiba Semiconductor and Storage. These devices are engineered specifically for radio frequency applications. The 2SC5086 series focuses on providing reliable amplification capabilities for wireless communication systems and broadcast equipment operating in higher frequency bands.

Replacement Considerations

Consult official Toshiba Semiconductor and Storage documentation for confirmed substitute part numbers. Cross-referencing with other manufacturers requires careful verification of electrical parameters and pin configurations to ensure functional compatibility.

2SC5086-Y,LF2SC5086-Y,LF
$0.19
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