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The 2SC5086-Y,LF is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. Designed for VHF to UHF band applications, it functions as a low noise amplifier. The device features a high gain characteristic with a typical S-parameter magnitude of 11dB at 1 GHz. It achieves a low noise figure of 1.1dB at the same frequency. The component utilizes a surface mount package suitable for automated assembly processes in RF circuit designs.
Verify the part number suffix LF against official Toshiba Semiconductor and Storage documentation to confirm lead-free compliance status. Ensure the manufacturer identification matches Toshiba Semiconductor and Storage rather than generic distributors. Confirm the specific package type and marking codes align with current production standards before finalizing procurement orders.
Select this component when designing circuits operating within the VHF to UHF spectrum that require minimal signal degradation. The device is appropriate for applications prioritizing a low noise figure alongside high gain. Engineers should evaluate thermal management requirements based on the specific power dissipation limits defined in the official datasheet for the chosen package configuration.
This component belongs to the family of silicon NPN epitaxial planar transistors produced by Toshiba Semiconductor and Storage. These devices are engineered specifically for radio frequency applications. The 2SC5086 series focuses on providing reliable amplification capabilities for wireless communication systems and broadcast equipment operating in higher frequency bands.
Consult official Toshiba Semiconductor and Storage documentation for confirmed substitute part numbers. Cross-referencing with other manufacturers requires careful verification of electrical parameters and pin configurations to ensure functional compatibility.