2SC5099

Single Bipolar Transistors Overview

The Sanken 2SC5099 is a silicon NPN triple diffused planar transistor designed for audio and general-purpose applications. It features an absolute maximum collector current of 6 A, a collector-emitter breakdown voltage of 80 V, and a power dissipation rating of 60 W at 25°C case temperature. The device exhibits a minimum DC current gain (hFE) of 50 and a typical transition frequency (fT) of 20 MHz. It utilizes the FM100 (TO-3PF) package with three pins.

Single Bipolar Transistors Feature Summary

• Triple diffused planar construction for enhanced reliability
• Complementary pairing with the 2SA1907 PNP transistor
• Optimized for high-speed switching performance in audio circuits

Single Bipolar Transistors Applications

• Audio amplifier output stages
• General-purpose switching circuits
• Complementary push-pull configurations

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (O, P, or Y) required for your design, as these denote distinct gain ranges. Confirm that the TO-3PF mounting style aligns with your thermal management strategy. Ensure compliance with RoHS standards if applicable to your manufacturing process. Check for any regional regulatory certifications required for import or deployment.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with moderate current handling and high voltage tolerance is needed for audio frequencies. Consider the complementary 2SA1907 for balanced circuit designs. Evaluate thermal resistance requirements carefully, as the 60 W rating depends on case temperature conditions. Verify that the switching characteristics meet the speed requirements of the target application.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken's discrete semiconductor lineup, specifically categorized under bipolar junction transistors. It is engineered for use in consumer electronics and industrial equipment requiring reliable amplification. The part is identified by its triple-diffused structure, which distinguishes it from standard planar devices in terms of noise and frequency response characteristics.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.