2SC5161TLB

Single Bipolar Transistors Overview

The ROHM 2SC5161TLB is a high-voltage NPN silicon switching transistor designed for robust power control applications. It features a collector-emitter breakdown voltage of 400V and supports a continuous collector current of 2A, with a peak pulse rating of 4A. The device utilizes a three-layer diffused planar structure in a CPT3 (SC-63) package. Key electrical characteristics include a typical saturation voltage of 0.15V at 1A/0.2A drive conditions and a fast fall time of ≤1.0µs. The transition frequency reaches up to 50MHz, ensuring efficient performance in high-speed switching environments.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability of 400V for reliable operation in demanding power circuits.
• Low collector-emitter saturation voltage to minimize conduction losses during active states.
• Fast switching speed with reduced storage and fall times for improved efficiency.
• Robust construction using a three-layer diffused planar silicon technology.

Single Bipolar Transistors Applications

• High-voltage switching power supplies
• Inverter circuits for motor control
• Industrial load switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification required for the design, as the TLB suffix indicates a tape-and-reel packaging format with an ordering unit of 2500 pieces. Confirm that the CPT3 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under varying ambient temperatures. Cross-reference the absolute maximum ratings against the operational stress conditions of the final system to prevent device failure.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand high voltage isolation combined with moderate current handling capabilities. The low saturation voltage makes it suitable for applications where minimizing heat generation is critical. Consider the transition frequency specifications if the switching frequency approaches the upper limits of the device's bandwidth. Evaluate the thermal resistance characteristics relative to the available heatsinking or board copper area to maintain junction temperature within safe operating limits.

Single Bipolar Transistors Part Context

This transistor belongs to ROHM's lineup of general-purpose high-voltage switching devices. It is engineered to replace older discrete solutions in compact power modules. The SC-63 package provides a balance between thermal performance and space efficiency. It serves as a fundamental building block for power electronics requiring reliable NPN switching action under high voltage stress.

Single Bipolar Transistors Replacement Considerations

Direct pin-compatible replacements should be verified against the 400V VCEO and 2A IC specifications. Ensure any substitute maintains similar saturation voltage and switching speed characteristics to preserve circuit timing and efficiency.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (BVCEO) is rated at 400V.

How is the hFE gain classified for this part?

The hFE values are classified into ranges, such as Type B which covers an hFE range of 25 to 50.

What is the typical saturation voltage under standard drive conditions?

The typical collector-emitter saturation voltage is 0.15V when measured at a collector current of 1A and a base current of 0.2A.