2SC5171(LBS2MATQ,M

Single Bipolar Transistors Overview

The Toshiba 2SC5171 is a silicon NPN epitaxial planar transistor housed in a TO-220NIS package. It features a collector-emitter breakdown voltage of 180 V and a maximum collector current of 2 A. The device offers a typical transition frequency of 200 MHz and a collector power dissipation rating of 20 W at 25°C case temperature. DC current gain ranges from 50 to 320 depending on operating conditions.

Single Bipolar Transistors Feature Summary

• High transition frequency for RF applications
• Complementary pairing with the 2SA1930 PNP transistor
• Epitaxial planar silicon construction

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplification

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation as requirements vary by region. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to ensure long-term operational stability under thermal stress.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-frequency performance alongside moderate power handling capabilities. Ensure adequate heat sinking is provided to maintain junction temperatures within the specified 150°C limit during continuous operation. Verify that the complementary 2SA1930 is available if symmetrical push-pull configurations are required.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup designed for audio and RF power stages. It serves as the complementary counterpart to the 2SA1930, facilitating balanced circuit topologies. The component utilizes standard TO-220 mounting styles suitable for through-hole PCB assembly.

Single Bipolar Transistors Replacement Considerations

The 2SA1930 is documented as the complementary pair. No other direct substitutes are confirmed in the datasheet.

Single Bipolar Transistors FAQ

What is the typical transition frequency?

The typical transition frequency (fT) is 200 MHz.

Is this component intended for medical or safety devices?

No, it is intended for general electronics and not warranted for unintended usage such as medical instruments or safety devices.

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) is 180 V.