2SC5171,MATUDQ(J

Single Bipolar Transistors Overview

The Toshiba 2SC5171 is a silicon NPN epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 200 MHz, making it suitable for RF and audio amplification circuits. The device supports a maximum collector current of 2 A and withstands collector-emitter voltages up to 180 V. Packaged in a TO-220FP format with a thermal resistance optimized for through-hole mounting, it dissipates up to 20 W at 25°C case temperature. Its complementary counterpart is the 2SA1930 PNP transistor.

Single Bipolar Transistors Feature Summary

• High transition frequency of 200 MHz for efficient signal amplification
• Complementary pairing capability with the 2SA1930 PNP transistor
• Robust power handling with 20 W dissipation capacity under specified conditions

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers
• General electronics equipment

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the marking code C5171 on the package surface. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as regulatory adherence varies by production lot. Ensure the ordering suffix matches the specific lead-free finish requirements for your assembly process. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a minimum 180 V collector-emitter breakdown voltage and a continuous current rating of 2 A. The 200 MHz transition frequency makes it appropriate for high-speed switching or audio frequency amplification tasks. Consider the TO-220FP package dimensions for PCB layout compatibility and ensure adequate heatsinking is available to manage the 20 W power dissipation limit effectively during operation.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC series of silicon NPN epitaxial transistors. It is specifically engineered for use in power amplifier stages where high-frequency response and substantial current handling are required. The device is part of a complementary pair system, designed to work alongside the 2SA1930 PNP transistor for balanced push-pull configurations in audio and RF applications.

Single Bipolar Transistors Replacement Considerations

The official complementary substitute is the 2SA1930 PNP transistor. Verify pinout compatibility and thermal characteristics when sourcing alternatives from other manufacturers.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC5171?

The typical transition frequency (fT) is 200 MHz.

Is the 2SC5171 compatible with the 2SA1930?

Yes, the datasheet explicitly states that the 2SC5171 is complementary to the 2SA1930.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 180 V.