2SC5171,Q(J

Single Bipolar Transistors Overview

The Toshiba 2SC5171 is a silicon NPN epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 200 MHz, making it suitable for RF and audio amplification tasks. The device is packaged in a TO-220NIS (TO-220FP) format with three pins. Key electrical ratings include a collector-emitter voltage of 180 V, a collector current capacity of 2 A, and a collector power dissipation of 20 W at 25°C case temperature. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High transition frequency of 200 MHz for efficient signal amplification
• Complementary pairing available with the 2SA1930 PNP transistor
• Robust thermal management capabilities via the TO-220NIS package

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers
• General electronics equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout orientation and lead finish specifications. Confirm RoHS compliance status directly with the supplier or through official documentation prior to integration into designs requiring restricted substance limitations.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high-frequency performance alongside moderate power handling capabilities. Ensure the design accounts for the 20 W power dissipation limit at the specified case temperature. Verify that the complementary 2SA1930 is utilized if a push-pull configuration is required for optimal circuit symmetry.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC series of bipolar junction transistors. It is specifically engineered as an NPN epitaxial type device intended for use in general-purpose power amplification scenarios. The part is widely recognized for its compatibility with complementary PNP counterparts in audio and RF driver stages.

Single Bipolar Transistors Replacement Considerations

The 2SA1930 serves as the designated complementary PNP counterpart for this NPN transistor. Designers should verify pinout compatibility and matching electrical characteristics when substituting components in existing circuit layouts.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC5171?

The typical transition frequency (fT) is 200 MHz.

Is the 2SC5171 compatible with other transistors?

Yes, it is officially documented as complementary to the 2SA1930 PNP transistor.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 180 V.