2SC5200-O(Q)

$3.38

Description：TRANS NPN 230V 15A TO-3P
Series：-

SKU:facbd08bc780 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC5200-O(Q) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 230V 15A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5200-O(Q)

Description：TRANS NPN 230V 15A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray
Transistor Type：NPN
Current - Collector (Ic) (Max)：15 A
Voltage - Collector Emitter Breakdown (Max)：230 V
Vce Saturation (Max) @ Ib, Ic：3V @ 800mA, 8A
Current - Collector Cutoff (Max)：5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 1A, 5V
Power - Max：150 W
Frequency - Transition：30MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3PL
Supplier Device Package：TO-3P(L)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC5200-O(Q)

2SC5200-O(Q)

Single Bipolar Transistors Overview

The Toshiba 2SC5200-O(Q) is a silicon NPN triple diffused power transistor housed in the TO-3PL (2-21F1A) package. It features a collector-emitter breakdown voltage of 230 V and a continuous collector current rating of 15 A. The device dissipates up to 150 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. Its transition frequency reaches 30 MHz, and it provides a DC current gain ranging from 80 to 160.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for robust operation
Designed as a complementary pair to the 2SA1943 PNP transistor
Optimized for high fidelity audio amplifier output stages

Single Bipolar Transistors Applications

High fidelity audio amplifier output stages
General-purpose power amplification circuits
Switching applications requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance details are not explicitly defined within the standard datasheet text. Confirm that the specific ordering suffix matches the required hFE classification band. Ensure procurement channels provide authentic components to maintain reliability standards outlined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component when designing high-power audio systems requiring a 230 V NPN transistor. It serves as the direct complementary match to the 2SA1943. Designers must account for thermal management, as the 150 W dissipation rating requires mounting on an appropriate heat sink. Verify that the application circuit operates within the Safe Operating Area curves provided in the electrical characteristics section.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5200 series of power transistors manufactured by Toshiba Semiconductor and Storage. The series is engineered primarily for audio power amplification, offering high voltage ratings and significant current handling capabilities. The device utilizes a triple diffused process to achieve its specified performance metrics and switching speeds suitable for general-purpose power electronics.

Single Bipolar Transistors Replacement Considerations

The 2SA1943 is the designated complementary PNP transistor for this device. Other potential substitutes include the TTC5200 or the 2SD1313, though pinout and exact electrical parameters should be verified against the original design requirements before implementation.