2SC5200-O(S1,F

$3.63

Description：TRANS NPN 230V 15A TO-3P
Series：-

SKU:0794b4789971 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC5200-O(S1,F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 230V 15A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5200-O(S1,F

Description：TRANS NPN 230V 15A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：15 A
Voltage - Collector Emitter Breakdown (Max)：230 V
Vce Saturation (Max) @ Ib, Ic：3V @ 800mA, 8A
Current - Collector Cutoff (Max)：5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：55 @ 1A, 5V
Power - Max：150 W
Frequency - Transition：30MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3PL
Supplier Device Package：TO-3P(L)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC5200-O(S1,F

2SC5200-O(S1,F

Single Bipolar Transistors Overview

The Toshiba 2SC5200 is a silicon NPN triple diffused power transistor designed for high-voltage, high-current applications. It features a collector-emitter breakdown voltage of 230 V and supports a continuous collector current of 15 A with a maximum collector power dissipation of 150 W at 25°C case temperature. The device exhibits a transition frequency of 30 MHz and a DC current gain ranging from 35 to 160 depending on operating conditions. It utilizes the TO-264 (JEDEC) package and weighs approximately 9.75 g.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability up to 230 V
Complementary pairing with the 2SA1943 PNP transistor
Triple diffused silicon construction for robust performance

Single Bipolar Transistors Applications

Output stages for 100-W high fidelity audio amplifiers
General-purpose power amplifier circuits
Power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives as indicated in the datasheet. Confirm that the specific ordering suffix matches the required hFE classification (R or O). Ensure compliance with all applicable laws regarding restricted substances before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling and substantial current capacity. Verify thermal management requirements against the absolute maximum ratings, particularly the 150 W dissipation limit at 25°C. Consider the complementary 2SA1943 for push-pull configurations.

Single Bipolar Transistors Part Context

Manufactured by Toshiba Semiconductor and Storage, the 2SC5200 belongs to a series of high-power bipolar junction transistors. Commercial production began in September 1994. It is engineered specifically for demanding audio output stages where high linearity and power handling are critical.

Single Bipolar Transistors Replacement Considerations

The official complementary counterpart is the 2SA1943. Other equivalent parts may exist but require verification against electrical characteristics and pinout compatibility.