2SC5200N(S1,E,S)

Single Bipolar Transistors Overview

The Toshiba 2SC5200N is a silicon NPN triple-diffused bipolar transistor designed for power amplifier applications. It features a collector-emitter breakdown voltage of 230 V and supports a continuous collector current of 15 A with a maximum power dissipation of 150 W at 25°C case temperature. The device exhibits a transition frequency of 30 MHz and a DC current gain ranging from 35 to 160. Packaged in the TO-3P(N) format, it provides a junction-to-case thermal resistance of 0.83 °C/W.

Single Bipolar Transistors Feature Summary

• High collector voltage rating of 230 V minimum
• Complementary pairing with the 2SA1943N PNP transistor
• Triple-diffused silicon construction for robust performance

Single Bipolar Transistors Applications

• Power amplifiers
• High-fidelity audio frequency amplifier output stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the package designation matches the required TO-3P(N) form factor. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards specified in the manufacturer's handbook.

Single Bipolar Transistors Selection Notes

Select this component when designing high-voltage audio output stages requiring a complementary NPN/PNP pair. The 2SC5200N serves as the direct NPN counterpart to the 2SA1943N. Consider the 150 W power dissipation capability and the 0.83 °C/W thermal resistance for heatsink sizing requirements in continuous operation scenarios.

Single Bipolar Transistors Part Context

Released in August 2012, the 2SC5200N belongs to Toshiba's line of silicon NPN triple-diffused bipolar transistors. It is engineered specifically for high-power audio applications, offering a balanced electrical profile suitable for push-pull configurations where matching characteristics with its complementary PNP partner are essential for circuit symmetry.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1943N as the complementary match. No other substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the recommended complementary transistor for the 2SC5200N?

The 2SA1943N is officially designated as the complementary PNP transistor for use with the 2SC5200N.

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) is rated at 230 V.

How is the TO-3P(N) package pinout configured?

Pin 1 is Base, Pin 2 is Collector (Heatsink), and Pin 3 is Emitter.