2SC5201,T6MURAF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC5201,T6MURAF(J is a silicon NPN triple diffused mesa type transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a maximum DC collector current (IC) of 50 mA. The device exhibits a low collector-emitter saturation voltage (VCE(sat)) of 1.0 V max at IC = 20 mA and IB = 0.5 mA. It operates within a junction temperature range up to 150 °C and utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Triple diffused mesa structure optimized for high-voltage switching performance
• High breakdown voltage capability with VCEO rated at 600 V
• Low saturation voltage characteristic ensuring efficient power handling

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Switching regulators
• DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component meets all absolute maximum ratings for your operating conditions. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing design integration.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with a 600 V rating is required in a small through-hole package. Ensure the application stays within the 50 mA continuous collector current limit. Consider the thermal characteristics and the 900 mW power dissipation capability relative to the ambient temperature and heat sinking requirements of the target circuit.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5201 series of high-voltage switching transistors manufactured by Toshiba Semiconductor and Storage. These devices utilize a triple diffused mesa process to achieve robust performance in demanding switching environments. The series is widely recognized for its reliability in general electronics applications where high voltage isolation and fast switching are necessary.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba resources for verified substitute part numbers. Cross-referencing should be performed carefully to ensure equivalent voltage, current, and package specifications are maintained.