2SC5201(T6MURATAFM

Single Bipolar Transistors Overview

The Toshiba 2SC5201 is a silicon NPN triple diffused mesa type transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a collector-base voltage (VCBO) of 600 V. The device supports a maximum DC collector current of 50 mA and a pulse collector current of 100 mA, with a collector power dissipation rating of 900 mW at 25°C ambient temperature. It exhibits a low saturation voltage of 1.0 V maximum at IC = 20 mA and IB = 0.5 mA. The component utilizes a JEDEC TO-92MOD package and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Triple diffused mesa structure engineered specifically for high-voltage switching operations
• High breakdown voltage capability rated at 600 V for both collector-emitter and collector-base terminals
• Low saturation voltage characteristic ensuring efficient performance in switching circuits

Single Bipolar Transistors Applications

• General electronics applications including computers and personal equipment
• Office equipment and measuring instruments
• Industrial robots and home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility or lead-free designation. Confirm that the selected variant matches the required marking code and lot number indication format. Ensure the procurement channel provides valid datasheet references corresponding to the exact part number requested.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling capabilities combined with low saturation voltage characteristics. Verify that the operating collector current remains within the 50 mA continuous limit and that thermal management accommodates the 900 mW power dissipation rating. Ensure the application falls within general electronics categories and avoids restricted unintended uses specified by the manufacturer.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC series of bipolar junction transistors. It is manufactured using a silicon NPN triple diffused mesa process technology. The device is housed in a standard JEDEC TO-92MOD plastic package, weighing approximately 0.36 grams. It is intended for use in general-purpose electronic systems where high voltage isolation and reliable switching are required.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on package type or generic voltage ratings. Verify pinout compatibility and electrical parameter margins before substitution.