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2SC5226-5-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 70MA 10V FT=7G. Review the specifications below when checking this part for your BOM.
The onsemi 2SC5226-5-TL-E is an NPN RF bipolar junction transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 10 V and supports a continuous DC collector current of 70 mA. The device features a transition frequency of 7 GHz, enabling efficient signal processing in radio frequency circuits. It is housed in a compact CP surface-mount package, which measures 2.9 x 1.5 x 1.1 mm, ensuring minimal footprint. The component dissipates up to 200 mW of power and functions reliably within a temperature range extending to +150 °C.
Verify the specific suffix against official manufacturer documentation to confirm pinout and electrical characteristics match design requirements. Ensure compatibility with existing PCB footprints and thermal management strategies. Cross-reference datasheet revisions to validate performance parameters before finalizing procurement decisions.
Select this component when designing circuits requiring high-speed switching or amplification at frequencies near 7 GHz. Evaluate the trade-off between the small CP package size and thermal dissipation capabilities. Confirm that the 10 V voltage rating aligns with the system's operational limits to prevent breakdown under transient conditions.
This part belongs to the family of RF transistors manufactured by onsemi, specifically engineered for microwave and radio frequency applications. The 2SC5226 series utilizes advanced silicon technology to achieve high gain and low noise figures. These components are integral to modern electronic systems requiring reliable high-frequency performance in compact form factors.
Consult official substitution guides for verified alternatives. Generic replacements may differ in transition frequency or package dimensions.
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