2SC5226A-5-TL-E

$0.50

Description：RF TRANS NPN 10V 7GHZ 3-MCP
Series：-

SKU:195f3d70a903 Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 7GHZ 3-MCP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1dB @ 1GHz
Gain：12dB
Power - Max：150mW
DC Current Gain (hFE) (Min) @ Ic, Vce：135 @ 20mA, 5V
Current - Collector (Ic) (Max)：70mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：3-MCP
Grade：-
Qualification：-

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2SC5226A-5-TL-E

Overview

The onsemi 2SC5226A-5-TL-E is a discontinued NPN single RF transistor housed in an MCP3 (SC-70) surface-mount package. It features a collector-to-emitter voltage of 10 V, a maximum collector current of 70 mA, and a typical transition frequency of 7 GHz. The device provides a DC current gain range of 135 to 270 at 20 mA and exhibits a typical noise figure of 1.0 dB at 1 GHz. It operates with a junction temperature up to 150 °C and is supplied in tape and reel packaging.

Feature Summary

High-frequency operation with a typical transition frequency of 7 GHz
Low-noise performance suitable for sensitive RF applications
High forward transfer gain at 1 GHz

Applications

VHF to UHF wide-band low-noise amplifier circuits
RF signal processing stages requiring high gain
Wireless communication systems operating in the VHF/UHF spectrum

Procurement Notes

This specific part number is officially marked as discontinued by the manufacturer. Verification of availability should focus on obsolete stock or secondary market sources rather than standard distribution channels. Confirm the exact ordering suffix and revision history before procurement to ensure compatibility with existing designs.

Selection Notes

Select this component only if legacy design compatibility is required, as it is no longer in active production. For new designs, consider evaluating alternative NPN RF transistors from the same family that offer current manufacturing support. Verify that the MCP3 package dimensions and pinout match the target PCB layout constraints.

Part Context

The 2SC5226A series consists of NPN epitaxial planar silicon transistors designed for RF applications. The -5-TL-E suffix denotes a specific DC current gain rank (hFE 135–270) within the broader 2SC5226A product line. This ranking ensures tighter performance consistency for high-gain amplifier requirements compared to lower-ranked variants.