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The 2SC5231A-8-TL-E is an NPN single RF transistor manufactured by onsemi, housed in the ultrasmall SMCP (SOT-416) package. It operates with a maximum collector-to-emitter voltage of 10V and a collector current limit of 70mA. The device features a typical gain-bandwidth product (fT) of 7GHz at VCE=5V and IC=20mA. Key electrical characteristics include a typical noise figure of 1.0dB at 1GHz and a forward transfer gain magnitude squared (|S21e|^2) of 12dB under similar conditions. The '8' suffix indicates a DC current gain (hFE) rank of 90 to 180 at IC=20mA.
Verify the ordering suffix matches the required hFE rank; the '-8' designation specifies a gain range of 90 to 180. Confirm the tape-and-reel quantity corresponds to the standard minimum packing quantity of 3,000 pieces per reel. Ensure the component meets Pb-Free specifications as indicated in the ordering information.
Select this component when space constraints necessitate the SMCP package while maintaining high-frequency performance. Consider the specific hFE rank requirements for biasing stability; the '-8' variant offers a mid-range gain compared to other available ranks. Validate that the 10V collector-to-emitter voltage rating aligns with the circuit's maximum operating conditions.
This part belongs to the 2SC5231A series of NPN RF transistors from onsemi. It shares the same core electrical specifications and package type as the 2SC5231A-9-TL-E, differing only in the DC current gain classification. Both variants utilize the SOT-416 footprint and are intended for high-frequency analog applications.
The 2SC5231A-9-TL-E serves as a direct functional substitute with identical electrical parameters, differing solely in the hFE gain ranking. Verify that the alternative rank fits the design's biasing requirements before substitution.