2SC5231A-9-TL-E

Overview

The 2SC5231A-9-TL-E is an NPN single RF transistor manufactured by onsemi in the SMCP (SOT-416) package. It operates with a maximum collector-to-emitter voltage of 10V and a collector current of 70mA, dissipating up to 100mW. The device features a typical gain-bandwidth product (fT) of 7GHz at VCE=5V and IC=20mA. At 1GHz, it provides a typical forward transfer gain (|S21e|^2) of 12dB and a noise figure of 1.0dB under standard operating conditions.

Feature Summary

• Ultrasmall-sized SMCP package designed for compact and slim applications
• High cut-off frequency supporting GHz-range operations
• Low-noise performance suitable for sensitive signal processing

Applications

• RF amplification stages
• Low-noise amplifier (LNA) circuits
• Wireless communication modules

Procurement Notes

Verify the ordering suffix matches the specific hFE rank required for the design. Confirm the minimum packing quantity aligns with production needs. Ensure the component meets RoHS compliance standards if mandated by the project specifications.

Selection Notes

Select this model when high-frequency operation near 7GHz is necessary within a constrained power budget. The -9 suffix indicates a DC current gain range of 135 to 270, which differs from other ranks. Evaluate thermal management capabilities given the low power dissipation rating of 100mW.

Part Context

This component belongs to the 2SC5231A series of NPN RF transistors. Variants such as the 2SC5231A-8-TL-E share identical electrical characteristics but differ in the DC current gain classification. All variants utilize the same SMCP footprint and pinout configuration.

Replacement Considerations

Direct substitutes include the 2SC5231A-8-TL-E, provided the lower hFE range is acceptable. Verify that any alternative maintains the 10V collector-to-emitter voltage limit and the 70mA maximum collector current specification.