2SC5245A-4-TL-E

Overview

The 2SC5245A-4-TL-E is an NPN epitaxial planar silicon RF transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 10 V and a maximum DC collector current of 70 mA. The device achieves a transition frequency (fT) of 7 GHz, making it suitable for high-frequency applications. Key electrical parameters include a minimum DC current gain (hFE) of 90 at 20 mA and 5 V, and a typical noise figure of 1 dB at 1 GHz. The component is housed in an SC-70 (SOT-323) surface-mount package with a maximum power dissipation of 150 mW and operates up to a junction temperature of 150 °C.

Feature Summary

• High-frequency performance optimized for RF signal processing
• Low-noise characteristics suitable for sensitive amplifier stages
• Compact surface-mount packaging for efficient board space utilization

Applications

• RF low-noise amplification
• High-frequency signal processing circuits
• Wireless communication modules

Procurement Notes

Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the specific suffix matches the required package and tape-and-reel specifications. Check for RoHS compliance status as indicated in the datasheet. Ensure storage conditions adhere to moisture sensitivity level requirements before soldering.

Selection Notes

Select this component when a small-form-factor NPN RF transistor with a 10 V breakdown voltage is required. Consider the 7 GHz transition frequency for bandwidth needs. Evaluate the 150 mW power dissipation limit against thermal constraints. Compare noise figures if signal integrity is critical for the application design.

Part Context

This part belongs to onsemi's family of NPN epitaxial planar silicon RF transistors designed for high-frequency operations. It shares similar electrical characteristics with other devices in the series, such as the 2SC5226A, but differs in package configuration. The component is intended for use in compact electronic systems requiring reliable RF performance.

Replacement Considerations

The 2SC5226A-4-TL-E is a documented single-transistor equivalent within the same package type. Verify pinout compatibility and electrical parameter alignment before substitution.