2SC5337-AZ

Overview

The 2SC5337-AZ is an NPN silicon RF transistor designed for high-frequency low distortion amplification. It features a 4-pin power Minimold package with a collector face connection. Key electrical parameters include a maximum collector-to-emitter voltage (VCEO) of 15 V, a maximum collector current (IC) of 250 mA, and total power dissipation of 2.0 W on a ceramic substrate. At VCE = 10 V and IC = 50 mA, it provides typical insertion power gain of 8.3 dB at 1 GHz, noise figure of 1.5 dB at 500 MHz, and intermodulation distortion levels of IM2 = 59.0 dB and IM3 = 82.0 dB.

Feature Summary

• Optimized for high-frequency applications requiring low signal distortion
• Provides improved gain characteristics compared to the 2SC4536 model
• Engineered for low noise performance in RF amplifier circuits

Applications

• High-frequency low distortion amplifiers
• RF signal processing stages
• Low noise amplifier modules

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging details. The -AZ suffix indicates Pb-Free electrode terminals within the 4-pin power Minimold package. Confirm lead availability and compliance status directly with authorized distributors or Renesas Electronics Corporation representatives prior to procurement.

Selection Notes

Select this component for designs requiring high linearity and low noise in the UHF band. Ensure the circuit layout supports the 4-pin power Minimold package dimensions. Verify that the operating conditions remain within the absolute maximum ratings, specifically the 15 V collector-to-emitter voltage limit and 250 mA current threshold.

Part Context

This device belongs to the NEC/Renesas 2SC5337 series of NPN silicon RF transistors. It serves as a successor or alternative to earlier models like the 2SC4536, offering enhanced gain and linearity metrics. The part is manufactured by Renesas Electronics Corporation, formerly NEC Electronics.

Replacement Considerations

The datasheet explicitly notes improved gain from the 2SC4536. Designers should verify pin compatibility and thermal requirements when substituting other NPN RF transistors in existing layouts.