2SC5338-AZ

Overview

The CEL 2SC5338-AZ is a discontinued NPN silicon RF transistor designed for high-frequency low distortion amplifier applications. It features a 4-pin Power Minimold package and operates with a collector-emitter voltage of 12 V and a maximum collector current of 150 mA. The device provides a typical gain bandwidth product (fT) of 6.0 GHz at VCE = 5 V and IC = 50 mA. At 1 GHz, it delivers an insertion power gain of 10 dB typically. Key electrical characteristics include a reverse transfer capacitance of 1.0 pF and low intermodulation distortion levels of -55 dB (IM2) and -76 dB (IM3).

Feature Summary

• Engineered for high-frequency low distortion amplifier applications.
• Features a 4-pin Power Minimold package to improve gain compared to previous models.
• Provides high gain with a typical value of 10 dB at 1 GHz.

Applications

• High-frequency low distortion amplifiers

Procurement Notes

This component is officially marked as discontinued by the manufacturer. Verification of availability should be conducted through authorized distributors or secondary market channels. Confirm the specific ordering suffix matches the required supply form, such as magazine cases or embossed taping, as standard production has ceased.

Selection Notes

Select this component based on its specific NPN silicon construction and 4-pin Power Minimold package requirements. Ensure the design accommodates the 12 V collector-emitter voltage limit and 150 mA maximum collector current. Verify that the operating frequency aligns with the 6.0 GHz gain bandwidth product and that the thermal dissipation capabilities meet the system's ambient temperature constraints.

Part Context

The 2SC5338-AZ is functionally equivalent to the NE462M02-AZ. Both part numbers refer to the same NPN silicon RF transistor manufactured by California Eastern Laboratories (CEL), now part of Renesas Electronics. The datasheet lists them together under the document number P10940EJ2V0DS00, indicating they share identical specifications and physical characteristics.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. As the component is discontinued, alternative sourcing requires independent engineering validation of pinouts and electrical parameters against potential replacement devices.

FAQ

What is the typical insertion power gain at 1 GHz?

The typical insertion power gain (|S21e|^2) is 10 dB when measured at VCE = 5 V, IC = 50 mA, and f = 1 GHz.

What are the absolute maximum ratings for voltages?

The absolute maximum ratings are 25 V for Collector to Base Voltage (VCBO), 12 V for Collector to Emitter Voltage (VCEO), and 2.5 V for Emitter to Base Voltage (VEBO).

How is the DC Current Gain (hFE) classified?

The hFE is classified into three ranks: SH (50 to 100), SF (80 to 160), and SE (125 to 250), measured at VCE = 5 V and IC = 50 mA using pulse measurement conditions.