2SC5338-T1-AZ

Overview

The CEL 2SC5338-T1-AZ is an NPN silicon RF bipolar transistor designed for high-frequency applications. It features a maximum collector-emitter breakdown voltage of 12V and supports operation up to a transition frequency of 6GHz. The device is rated for a continuous collector current of 150mA and can dissipate up to 1.8W of power. Packaged in a surface-mount SOT-89 case, it offers a noise figure of 2.3dB, making it suitable for low-noise amplification tasks in wireless communication systems.

Feature Summary

• NPN silicon construction optimized for radio frequency signal processing
• High transition frequency capability supporting GHz-range operations
• Low noise figure specification for sensitive receiver front-ends
• Surface-mount SOT-89 package design for automated assembly

Applications

• RF low-noise amplifier stages
• Wireless communication transceivers
• Signal conditioning circuits in mobile devices
• Broadband amplification modules

Procurement Notes

Verify the manufacturer designation as CEL (California Eastern Laboratories) when sourcing this component. Confirm that the ordering suffix -T1-AZ corresponds to the specified tape-and-reel packaging format if required by your manufacturing process. Ensure compliance with RoHS standards as indicated in distributor documentation before finalizing procurement orders.

Selection Notes

Select this transistor when a 12V breakdown voltage and 6GHz transition frequency are required for RF amplification. The 1.8W power dissipation rating must be evaluated against thermal management capabilities in the target application. Consider the SOT-89 footprint constraints during PCB layout design to ensure adequate heat sinking and electrical isolation.

Part Context

This component belongs to the family of RF bipolar transistors manufactured by CEL. It serves as a discrete semiconductor solution for high-frequency analog circuits. The part number structure indicates specific packaging and material specifications defined by the manufacturer for consistent performance across production batches.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other NPN RF transistors having similar 12V ratings and 6GHz transition frequencies only after verifying pinout compatibility and thermal characteristics.