2SC5354,XGQ(O

Description：TRANSISTOR NPN TO-3PN
Series：*

SKU:a765d72a6573 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC5354,XGQ(O is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANSISTOR NPN TO-3PN. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5354,XGQ(O

Description：TRANSISTOR NPN TO-3PN
Series：*
Mfr：Toshiba Semiconductor and Storage
Package：Tube
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC5354,XGQ(O

2SC5354,XGQ(O

Single Bipolar Transistors Overview

The Toshiba 2SC5354 is a high-speed, high-voltage NPN silicon triple diffused planar transistor designed for switching regulator and DC-DC converter applications. It features an 800 V collector-emitter breakdown voltage and a maximum continuous collector current of 5 A. The device achieves excellent switching performance with a rise time of 0.7 μs and a fall time of 0.5 μs at IC = 2 A. It operates within a junction temperature range up to 150 °C and utilizes the JEDEC 2-16C1A flange mount package.

Single Bipolar Transistors Feature Summary

Triple diffused planar structure optimized for high-speed switching operations
High breakdown voltage capability suitable for demanding power supply environments
Low saturation voltage characteristics for efficient power handling

Single Bipolar Transistors Applications

Switching regulators
High-speed DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels as markings indicate specific lot variations. Confirm environmental compliance requirements against local regulations before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods to ensure long-term operational stability under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation combined with rapid switching speeds. Ensure thermal management supports the 100 W dissipation rating at case temperatures of 25 °C. Validate base drive currents against the specified hFE ranges to maintain optimal saturation levels during operation.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup focusing on power switching solutions. It complements other high-voltage devices in the portfolio by offering enhanced speed metrics compared to standard general-purpose transistors. The triple diffused manufacturing process contributes to its robustness in high-frequency power conversion circuits.