2SC5374A-TL-E

2SC5374A-TL-E

$0.18
  • Description:RF TRANS NPN 10V 5.2GHZ SMCP
  • Series:-

SKU:531cfcfa9ffb Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 5.2GHZ SMCP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:5.2GHz
  • Noise Figure (dB Typ @ f):1.4dB @ 1GHz
  • Gain:10.5dB @ 1GHz
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 7mA, 3V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SMCP
  • Grade:-
  • Qualification:-

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2SC5374A-TL-E

Overview

The onsemi 2SC5374A-TL-E is an NPN silicon epitaxial planar transistor designed for high-frequency applications. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 10 V. The device operates with a transition frequency up to 5.2 GHz, making it suitable for RF amplification tasks. It is housed in an SMCP surface-mount package measuring 1.6 x 0.8 x 0.75 mm. Key electrical limits include a collector-base voltage of 20 V, an emitter-base voltage of 2 V, and a maximum power dissipation of 100 mW. The component supports junction temperatures up to +150 °C.

Feature Summary

  • High-frequency operation capability up to 5.2 GHz
  • Compact SMCP surface-mount packaging for space-constrained designs
  • NPN configuration optimized for small-signal amplification

Applications

  • RF amplifier circuits
  • High-frequency signal processing
  • Small-signal switching applications

Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm pinout and electrical characteristics. Ensure compatibility with RoHS3 standards if required by the target market. Cross-reference part numbers carefully as suffixes may indicate variations in tape-and-reel specifications or material declarations without altering core functionality.

Selection Notes

Select this component when designing circuits requiring NPN transistors with high transition frequencies and low power dissipation constraints. The 10 V collector-emitter voltage rating defines its suitability for low-voltage RF stages. Consider the SMCP package dimensions during PCB layout to ensure adequate thermal management within the 100 mW dissipation limit.

Part Context

This part belongs to the 2SC5374 series of high-frequency NPN transistors manufactured by onsemi. The series is engineered for RF and microwave applications where compact size and high-speed performance are critical. The TL-E suffix typically denotes specific packaging and environmental compliance attributes defined by the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided documentation. Verify parametric equivalence regarding transition frequency, voltage ratings, and package type before considering alternative components.

2SC5374A-TL-E2SC5374A-TL-E
$0.18
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