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The onsemi 2SC5374A-TL-E is an NPN silicon epitaxial planar transistor designed for high-frequency applications. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 10 V. The device operates with a transition frequency up to 5.2 GHz, making it suitable for RF amplification tasks. It is housed in an SMCP surface-mount package measuring 1.6 x 0.8 x 0.75 mm. Key electrical limits include a collector-base voltage of 20 V, an emitter-base voltage of 2 V, and a maximum power dissipation of 100 mW. The component supports junction temperatures up to +150 °C.
Verify the specific ordering suffix against official datasheets to confirm pinout and electrical characteristics. Ensure compatibility with RoHS3 standards if required by the target market. Cross-reference part numbers carefully as suffixes may indicate variations in tape-and-reel specifications or material declarations without altering core functionality.
Select this component when designing circuits requiring NPN transistors with high transition frequencies and low power dissipation constraints. The 10 V collector-emitter voltage rating defines its suitability for low-voltage RF stages. Consider the SMCP package dimensions during PCB layout to ensure adequate thermal management within the 100 mW dissipation limit.
This part belongs to the 2SC5374 series of high-frequency NPN transistors manufactured by onsemi. The series is engineered for RF and microwave applications where compact size and high-speed performance are critical. The TL-E suffix typically denotes specific packaging and environmental compliance attributes defined by the manufacturer.
Publicly confirmed substitute part numbers for this specific model were not identified in the provided documentation. Verify parametric equivalence regarding transition frequency, voltage ratings, and package type before considering alternative components.