2SC5455-A

Overview

The CEL 2SC5455-A is a discontinued NPN epitaxial silicon RF transistor housed in a MiniMold-4 package. It features a gain bandwidth product of 12 GHz and an insertion power gain of 8 to 10 dB at 2 GHz. The device operates with low noise, achieving a minimum noise figure of 1.5 dB at 2 GHz. Absolute maximum ratings include a collector-to-base voltage of 9 V, a collector current limit of 100 mA, and total power dissipation of 200 mW.

Feature Summary

• Designed for medium-output RF applications
• Provides high gain and low noise performance
• Features small reverse transfer capacitance
• Capable of operation at low supply voltages

Applications

• Medium-output RF amplification stages
• Low-noise amplifier (LNA) circuits
• High-frequency signal processing modules

Procurement Notes

This component is officially marked as discontinued by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm that the specific ordering suffix matches the required electrical binning and packaging format before finalizing any acquisition plans.

Selection Notes

Evaluate the 12 GHz gain bandwidth product against the target operating frequency. Ensure the circuit design respects the 9 V collector-to-base voltage limit and the 200 mW power dissipation threshold. Consider the MiniMold-4 package dimensions for PCB layout constraints.

Part Context

The 2SC5455-A is functionally equivalent to the NE67839 part number. Both identifiers refer to the same NPN epitaxial silicon transistor manufactured by California Eastern Laboratories. The datasheet confirms these are interchangeable designations for this specific RF component.

Replacement Considerations

No public substitute part numbers are documented in the official datasheet.