2SC5459(TOJS,Q,M)

Single Bipolar Transistors Overview

The Toshiba 2SC5459 is a silicon NPN triple diffused transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 400 V and a DC collector current rating of 3 A. The device achieves a maximum fall time of 0.3 μs at 1.2 A, ensuring rapid switching performance. It offers a minimum DC current gain of 20 at 0.3 A and supports up to 25 W of power dissipation at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Triple diffused construction optimized for high-speed switching operations
• High collector breakdown voltage capability for demanding circuit environments
• Rapid turn-off characteristics with minimal storage time

Single Bipolar Transistors Applications

• Switching regulator circuits
• High-voltage switching systems
• DC-DC converter designs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (TO, JS, or Q) against the manufacturer's latest documentation to confirm package type and lead finish specifications. Confirm RoHS compliance status directly with the supplier, as availability varies by region and production batch. Ensure the component meets the intended application's reliability requirements before integration.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with fast switching speeds. The 400 V rating suits flyback transformer drivers and snubber circuits. Evaluate thermal management needs carefully, as the device dissipates significant heat during continuous operation. Verify base drive currents are sufficient to maintain saturation within specified limits.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's discrete semiconductor lineup focusing on general-purpose and specialized switching transistors. The triple diffused process technology enhances switching speed compared to standard epitaxial types. It serves as a robust solution for power conversion stages where voltage withstand and transition times are critical design constraints.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 400 V collector-emitter voltage and 3 A current ratings. Verify pinout compatibility and package dimensions to prevent board layout modifications.