2SC5488-TL-E

Single Bipolar Transistors Overview

The 2SC5488-TL-E is an NPN silicon epitaxial planar transistor manufactured by onsemi, designed for high-voltage switching applications. It features a collector-emitter voltage (VCEO) of 160 V and a continuous collector current (IC) of 1.5 A. The device utilizes the TP-FA surface-mount package, which provides efficient thermal dissipation with a maximum power dissipation (Pd) of 1 W. Key electrical characteristics include a transition frequency (fT) of 120 MHz and a DC current gain (hFE) ranging from 140 to 350 at specified test conditions. The component supports a maximum operating junction temperature of +150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding switching environments
• Low saturation voltage for improved efficiency in power circuits
• Fast switching speed optimized for high-frequency operation
• Robust thermal performance within the TP-FA surface-mount package

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply output stages
• Motor driver interfaces
• Inverter systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL-E against the official onsemi datasheet to confirm pinout and packaging details. Ensure compatibility with RoHS and REACH regulations as required by your manufacturing standards. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm that the requested quantity aligns with standard factory packaging sizes to minimize handling costs.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor is required for high-voltage applications exceeding 100 V. The 1.5 A current rating makes it suitable for moderate power loads where space constraints favor surface-mount technology. Compare the 120 MHz transition frequency against circuit requirements to ensure adequate bandwidth. Evaluate the thermal resistance of the TP-FA package against your PCB copper area to maintain safe operating temperatures under load.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SC series of bipolar junction transistors produced by onsemi. It is engineered using FBET and MBIT processes to achieve high reliability and consistent performance. The device is part of a family designed for general-purpose high-voltage switching, offering a balance between voltage handling and current capacity in a compact form factor.

Single Bipolar Transistors Replacement Considerations

Consult the official onsemi documentation for direct replacements or pin-compatible alternatives. Verify that any substitute component matches the 160 V VCEO and 1.5 A IC ratings. Ensure the replacement package maintains similar thermal characteristics to prevent overheating in existing designs.