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Product Detailed Parameters
- Description：NPN RF TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2SC5508-T2B-A is an NPN silicon RF transistor manufactured by Renesas Electronics Corporation. It is designed for low-noise, high-gain amplification applications in the radio frequency spectrum. The device utilizes a flat-lead 4-pin thin-type Super Minimold (M04) package. Key electrical characteristics include a typical noise figure of 1.1 dB and a typical gain of 16 dB at VCE = 2 V, IC = 5 mA, and f = 2 GHz. The maximum available power gain is typically 19 dB at VCE = 2 V, IC = 20 mA, and f = 2 GHz. The component employs 25 GHz technology.
Feature Summary
- Optimized for low-noise and high-gain amplification tasks
- Utilizes 25 GHz transition frequency technology
- Housed in a compact flat-lead 4-pin thin-type Super Minimold (M04) package
Applications
- Low-noise amplifier circuits
- High-gain RF signal processing
- Radio frequency communication systems
Procurement Notes
Verify the specific suffix T2B-A against official Renesas documentation to confirm tape-and-reel packaging specifications. Confirm current lifecycle status as sources indicate potential obsolescence or end-of-life conditions for related variants. Ensure compatibility with the M04 package footprint during procurement planning.
Selection Notes
Select this component when designing circuits requiring minimal noise addition and significant signal amplification at 2 GHz. Verify that the operating conditions align with the specified VCE and IC parameters for optimal gain and noise performance. Consider the M04 package constraints for PCB layout and thermal management requirements.
Part Context
This part belongs to the 2SC5508 series of NPN silicon RF transistors originally developed by NEC Electronics and continued by Renesas Technology Corp following their merger. The series is characterized by its use in high-frequency applications where signal integrity and gain are critical. The T2B-A designation specifies the particular packaging and trailing format for this discrete semiconductor device.
Replacement Considerations
Publicly confirmed substitute part numbers for the 2SC5508-T2B-A are not available in the provided source material. Designers should consult official Renesas channels for qualified alternatives if this component is discontinued.
