2SC5509-T2-A

Overview

The 2SC5509-T2-A is an NPN silicon RF bipolar transistor designed for medium output power applications. It features low-noise characteristics and high-gain amplification capabilities suitable for frequencies up to 15 GHz. Key electrical parameters include a collector-emitter breakdown voltage of 3.3V, maximum power dissipation of 190mW, and a minimum DC current gain (hFE) of 50 at 10mA and 2V. The device typically achieves a noise figure of 1.2 dB and a gain of 12 dB at 2 GHz under standard bias conditions.

Feature Summary

• NPN silicon construction optimized for radio frequency operations
• Low-noise performance with typical 1.2 dB noise figure
• High-gain amplification capability for signal processing
• Flat-lead 4-pin thin-type Super Minimold package

Applications

• Medium output power RF amplification
• Low-noise amplifier stages in communication systems
• High-frequency signal processing circuits

Procurement Notes

This component is classified as obsolete and is no longer manufactured by CEL or Renesas Electronics. Procurement must focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Buyers should confirm the specific manufacturing date code and ensure that the parts have been stored under appropriate conditions to prevent degradation. Due to the end-of-life status, long-term supply continuity cannot be guaranteed, and alternative sourcing strategies should be evaluated immediately.

Selection Notes

Engineers selecting this part should consider its specific operating limits, including the 3.3V collector-emitter breakdown voltage and 190mW power dissipation rating. The device is intended for high-frequency applications up to 15 GHz, making it suitable for narrowband RF designs requiring low noise. Selection must account for the discontinued status, which necessitates evaluating substitute components with comparable S-parameters and thermal characteristics to ensure circuit compatibility during redesign phases.

Part Context

The 2SC5509 series represents a line of NPN silicon RF transistors historically used in microwave and radio frequency applications. The 2SC5509-T2-A variant specifically denotes the tape-and-reel packaging configuration. Originally produced by NEC and later associated with Renesas Electronics and CEL, these devices were engineered for flat-lead packages to facilitate surface-mount assembly in compact electronic modules requiring efficient signal amplification.

Replacement Considerations

Public confirmed substitutes include the BFP620H7764XTSA1 from Infineon Technologies. Engineers should verify pinout compatibility and electrical parameter alignment before implementing any replacement component in existing designs.