2SC5536A-TL-H

Overview

The onsemi 2SC5536A-TL-H is a silicon NPN bipolar junction transistor designed for radio frequency applications. It operates with a maximum collector-emitter voltage of 12 V and an emitter-base voltage of 2 V. The device supports a continuous collector current of 50 mA and features a transition frequency (fT) of 1.7 GHz. DC current gain (hFE) is specified at a minimum of 70 when tested at 50 mA and 2 V. Power dissipation is rated at 100 mW, with a maximum operating temperature of +150°C. The component is housed in an SC-81-3 surface-mount package.

Feature Summary

• Optimized for high-frequency RF signal processing within the 1.7 GHz transition frequency range.
• Capable of handling 50 mA continuous collector current with low voltage operation limits.
• Constructed using silicon technology for reliable performance in single-configuration circuits.

Applications

• RF amplifier stages requiring NPN polarity
• High-frequency oscillator circuits
• Signal processing modules operating below 12 V

Procurement Notes

Verify component authenticity through official onsemi channels or authorized distributors. Confirm RoHS compliance status via the manufacturer datasheet before integration. Check for obsolescence notices as the lifecycle status may indicate end-of-life conditions. Ensure storage and handling procedures meet ESD protection standards for sensitive semiconductor devices.

Selection Notes

Select this component for designs requiring a small-signal NPN transistor with specific 12 V breakdown characteristics. Compare the 100 mW power dissipation limit against thermal management capabilities in the target application. Evaluate the SC-81-3 footprint compatibility with existing PCB layouts. Consider the 1.7 GHz fT specification to ensure adequate bandwidth for the intended RF signals.

Part Context

This part belongs to the 2SC5536A series of RF bipolar transistors manufactured by onsemi. It utilizes standard silicon planar technology optimized for high-frequency performance. The device is distinct from power transistors due to its low current and voltage ratings, focusing instead on signal integrity and gain at radio frequencies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical specifications carefully if considering alternative RF NPN transistors from other manufacturers.