2SC5551AE-TD-E

Overview

The onsemi 2SC5551AE-TD-E is an NPN single RF transistor manufactured in a PCP (SOT-89) package. It features a collector-to-emitter voltage of 30 V and supports a continuous collector current of 300 mA with a peak pulse current of 600 mA. The device achieves a typical gain-bandwidth product (fT) of 3.5 GHz at 50 mA collector current. Maximum allowable collector dissipation reaches 1.3 W when mounted on a ceramic substrate. The component operates within a junction temperature range of -55°C to +150°C and is classified by DC current gain ranks.

Feature Summary

• High-frequency operation capability with a typical transition frequency of 3.5 GHz
• Robust current handling supporting up to 300 mA continuous collector current
• Designed for medium-output amplifier applications with high power dissipation capacity

Applications

• High-frequency medium-output amplifiers
• RF signal processing circuits
• Medium-current ultrahigh-speed switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging orientation and tape specifications. Confirm that the component meets lead-free requirements as stated in the datasheet. Ensure the selected rank aligns with the required DC current gain characteristics for the intended circuit design.

Selection Notes

Select this component for designs requiring high transition frequencies and moderate output power levels. Evaluate the thermal management strategy, as maximum power dissipation depends on mounting on a ceramic substrate. Consider the hFE ranking based on the specific bias conditions and gain requirements of the application circuit.

Part Context

This part belongs to the 2SC5551A series of NPN epitaxial planar silicon transistors. It is distributed in tape and reel packaging with a minimum quantity of 1,000 pieces per reel. The device is compatible with JEITA, JEDEC SC-62, SOT-89, and TO-243 mechanical standards.

Replacement Considerations

The 2SC5551AF-TD-E is a documented variant within the same series, distinguished by its DC current gain rank classification.