2SC5594XP-TL-E

Overview

The 2SC5594XP-TL-E is an NPN small-signal bipolar junction transistor designed for high-frequency amplifier applications. It features a collector-emitter breakdown voltage of 4.5V and operates at frequencies up to 24GHz. The device has a maximum power dissipation of 100mW and a collector current rating of 35mA. It is supplied in a CMPAK-4 surface-mount package, suitable for compact RF circuit designs requiring low-voltage operation.

Feature Summary

• Optimized for high-frequency signal amplification
• Low voltage operation capability
• Compact surface-mount packaging

Applications

• High frequency amplifier circuits
• RF signal processing modules
• Small signal amplification stages

Procurement Notes

Verify the specific ordering suffix (TL-E) against official Renesas documentation to confirm availability status. Cross-reference part numbers with authorized distributors to ensure authenticity. Check for any superseded components or alternative packages if the exact variant is discontinued. Confirm package type matches design requirements before procurement.

Selection Notes

Select this component for applications requiring NPN amplification at frequencies up to 24GHz with low voltage constraints. Ensure the 4.5V breakdown voltage aligns with the circuit's input signal amplitude limits. Consider the 100mW power dissipation limit when designing thermal management solutions for the CMPAK-4 package.

Part Context

This transistor belongs to Renesas Electronics Corporation's portfolio of small-signal bipolar transistors. It is specifically engineered for RF applications where high-frequency performance and low voltage operation are critical. The CMPAK-4 package provides a compact solution for modern electronic devices.

Replacement Considerations

Check for direct substitutes such as the 2SC5594XP-TL-H variant. Verify electrical parameters and package compatibility before substitution. Consult official cross-reference lists for approved alternatives.