2SC5606-A

Overview

The CEL 2SC5606-A is an NPN silicon RF transistor designed for low noise and high-gain amplification applications. It utilizes a 3-pin Ultra Super Minimold package with dimensions of 19mm x 1608, suitable for compact RF circuit designs. The component operates as a bipolar junction transistor optimized for radio frequency signals.

Feature Summary

• Engineered for low noise performance in RF signal paths
• Provides high-gain amplification capabilities
• Utilizes a compact 3-pin Ultra Super Minimold package

Applications

• Low noise amplifier stages
• High-gain RF amplification circuits
• Radio frequency signal processing modules

Procurement Notes

Verify the obsolete status of this part number before procurement planning. Confirm availability through authorized distributors or approved substitute components. Ensure that any replacement parts meet the original electrical specifications and package requirements to maintain system integrity.

Selection Notes

Select this component for applications requiring specific low-noise characteristics in RF amplification. Consider the discontinued status when designing new systems. Evaluate alternative transistors with matching gain and noise figures if supply continuity is required for long-term production.

Part Context

This device belongs to the family of NPN silicon RF transistors produced by California Eastern Labs (CEL). It shares functional similarities with other NEC/CEL RF devices like the NE66219. The product line focuses on providing reliable semiconductor solutions for radio frequency communication equipment and signal conditioning tasks.

Replacement Considerations

The BFP640FH6327XTSA1 from Infineon Technologies is listed as a similar available substitute. Verify pin compatibility and electrical parameters before substitution.