2SC5610

Single Bipolar Transistors Overview

The onsemi 2SC5610 is a single NPN silicon power bipolar junction transistor housed in a TO-220ML package. It supports a maximum collector current of 7 A and a collector-emitter breakdown voltage of 50 V. The device features a high transition frequency of 290 MHz, enabling operation in high-frequency applications. With a maximum power dissipation rating of 18 W, it is designed for robust performance in RF amplifier circuits and other high-speed switching environments requiring significant current handling capabilities.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a 290 MHz transition frequency
• Robust power handling with 18 W dissipation rating
• Suitable for RF amplifier and high-frequency circuit designs

Single Bipolar Transistors Applications

• RF amplifier circuits
• High-frequency switching applications
• General-purpose power amplification

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the exact package variant and tape-and-reel specifications, as these details define the physical form factor and shipping configuration. Ensure the component matches the required thermal management strategy for the 18 W dissipation rating. Cross-reference the datasheet electrical characteristics against the target application's voltage and current demands to guarantee operational safety margins.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with high current capacity and high-frequency response is required. The 50 V breakdown voltage and 7 A current limit suit moderate-power RF stages. Consider the TO-220ML package for through-hole mounting and heat sinking requirements. Evaluate thermal resistance parameters if operating near the maximum power dissipation limit to ensure reliable long-term performance.

Single Bipolar Transistors Part Context

The 2SC5610 belongs to the category of single bipolar transistors manufactured by onsemi. It serves as a discrete semiconductor device within the broader portfolio of power and signal processing components. This part is distinct from integrated circuits or multi-element arrays, functioning specifically as a standalone active element for amplification and switching tasks in electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for compatible substitutes. Verify that any alternative part maintains equivalent NPN polarity, minimum 50 V breakdown voltage, and at least 7 A current capacity. Ensure the replacement package allows for similar mechanical integration and thermal performance in the existing design.