Single Bipolar Transistors 2SC5658RM3T5G product image

2SC5658RM3T5G

$0.25
  • Description:TRANS NPN 50V 0.1A SOT-723
  • Series:-

SKU:db0383ddc95b Category: Brand:

  
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2SC5658RM3T5G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A SOT-723. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5658RM3T5G

  • Description:TRANS NPN 50V 0.1A SOT-723
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 60mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:215 @ 1mA, 6V
  • Power - Max:260 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SOT-723
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC5658RM3T5G

2SC5658RM3T5G

Single Bipolar Transistors Overview

The onsemi 2SC5658RM3T5G is a discontinued NPN silicon general-purpose amplifier transistor housed in an SOT-723 surface-mount package. It supports a maximum collector current of 150 mA and withstands collector-emitter voltages up to 50 Vdc. The device features a DC current gain (hFE) range of 215 to 375, with a transition frequency of 180 MHz and power dissipation capability of 260 mW.

Single Bipolar Transistors Feature Summary

  • Designed for low-power surface mount applications where board space is limited
  • Provides high DC current gain for efficient signal amplification
  • Features low collector-emitter saturation voltage for improved efficiency
  • Includes robust electrostatic discharge protection ratings

Single Bipolar Transistors Applications

  • General purpose amplifier circuits
  • Low power surface mount designs
  • Signal processing stages requiring compact packaging

Single Bipolar Transistors Procurement Notes

This component is officially marked as discontinued by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm that any sourced units match the exact marking code RM for the 2SC5658RM3T5G variant to ensure correct electrical specifications and pinout alignment.

Single Bipolar Transistors Selection Notes

Select this part only if the specific hFE range of 215 to 375 aligns with circuit requirements. Note that the standard 2SC5658M3T5G variant offers a different gain range of 120 to 560. Ensure the design accommodates the 260 mW thermal limit within the SOT-723 footprint constraints.

Single Bipolar Transistors Part Context

The 2SC5658 series consists of NPN silicon transistors intended for general-purpose amplification. The RM suffix specifically denotes the 2SC5658RM3T5G variant with distinct gain characteristics compared to other suffixes in the family. These devices are lead-free and comply with RoHS standards.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states these devices are not available and advises contacting representatives for information. No direct substitute part numbers are confirmed in the provided documentation.

2SC5658RM3T5G2SC5658RM3T5G
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