2SC5658T2LS

Single Bipolar Transistors Overview

The 2SC5658T2LS is an NPN general-purpose small signal amplifier transistor manufactured by Rohm Semiconductor. It features a collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 150 mA. The device has a power dissipation rating of 150 mW and a transition frequency (fT) of 180 MHz. DC current gain (hFE) ranges from 120 to 390, with a typical output capacitance (Cob) of 2.0 pF. It is housed in the VMT3 surface-mount package.

Single Bipolar Transistors Feature Summary

• Low output capacitance for high-frequency performance
• Designed as a complement to specific PNP transistors

Single Bipolar Transistors Applications

• General purpose small signal amplification

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as the part may be marked as not recommended for new designs. Ensure storage conditions prevent moisture absorption and electrostatic discharge damage prior to mounting.

Single Bipolar Transistors Selection Notes

Select this component for low-power, high-speed switching or amplification tasks requiring a 50 V breakdown voltage. The VMT3 package suits space-constrained surface-mount layouts. Verify that the required hFE bin aligns with circuit design specifications, as gain varies between ranks.

Single Bipolar Transistors Part Context

This transistor belongs to a family of general-purpose small signal amplifiers including the 2SC4617EB and 2SC4081UB. These devices share similar electrical characteristics but differ in packaging types such as EMT3F and UMT3F. The 2SC5658 specifically utilizes the SC-105AA/VMT3 form factor.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC5658T2LR. Similar alternatives are the 2SCR523MT2L and 2SC5658FHAT2LQ.