2SC5706-E

Single Bipolar Transistors Overview

The onsemi 2SC5706-E is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It utilizes silicon technology and is housed in a TO-251-3 (DPAK) surface-mount package with three leads. The device supports a maximum continuous collector current of 5 A and offers a collector-emitter breakdown voltage (VCEO) of 50 V, alongside a collector-base voltage (VCBO) of 60 V. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at specified test conditions, a transition frequency (fT) of 30 MHz, and a power dissipation rating of 1.75 W. The component operates within a junction temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability ensures efficient signal amplification and low base drive requirements.
• Robust thermal performance allows operation at elevated junction temperatures up to 150°C.
• Surface-mount TO-251-3 packaging facilitates automated assembly and compact circuit board layouts.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-frequency amplification stages
• Driver circuits for loads requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific suffix and manufacturer documentation to confirm exact electrical tolerances and compliance status before integration. Ensure that the procurement channel provides authentic components from authorized sources to avoid counterfeit risks. Cross-reference the datasheet revision date with your design requirements to guarantee parameter consistency. Confirm RoHS and REACH compliance details directly from the official product declaration provided by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when a surface-mount NPN BJT with 5 A current capacity and 50 V voltage rating is required. Consider the TO-251-3 package constraints regarding thermal dissipation and PCB copper area. Evaluate the 30 MHz transition frequency against the target application's operating speed. Compare the 1.75 W power dissipation limit with the expected thermal environment to ensure adequate heat sinking or airflow provisions are available.

Single Bipolar Transistors Part Context

The 2SC5706-E belongs to the broader family of discrete semiconductor products manufactured by onsemi. This series focuses on providing reliable silicon-based bipolar transistors for industrial and consumer electronics. The component represents a standard solution for designers needing robust switching elements in a compact form factor, aligning with onsemi's portfolio of high-efficiency standard products.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the 2SC5706-E were not identified in the available verified source material. Engineers should consult official cross-reference guides or contact the manufacturer directly for validated alternatives that match the specific electrical and mechanical requirements.