2SC5750-A

2SC5750-A

  • Description:RF TRANS NPN 6V 15GHZ
  • Series:-

SKU:1a2bd399e13b Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 6V 15GHZ
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):6V
  • Frequency - Transition:15GHz
  • Noise Figure (dB Typ @ f):1.7dB @ 2GHz
  • Gain:15dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:75 @ 20mA, 3V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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2SC5750-A

Overview

The 2SC5750-A is an NPN bipolar RF transistor manufactured by CEL, designed for high-frequency applications up to 15 GHz. It features a surface-mount package suitable for compact circuit designs. The device supports a collector-emitter voltage of 6V and a maximum collector current of 50mA. With a power dissipation rating of 200mW, it provides reliable performance in RF signal processing tasks.

Feature Summary

  • Optimized for medium output power amplification at radio frequencies
  • Capable of operation at frequencies up to 15 GHz
  • Designed for surface-mount integration in compact electronic assemblies

Applications

  • RF power amplification stages
  • High-frequency signal processing circuits
  • Wireless communication transceivers

Procurement Notes

Verify the manufacturer source carefully as multiple entities list this component. Confirm the specific suffix 'A' matches design requirements. Check RoHS compliance status prior to ordering. Ensure the surface-mount package type aligns with PCB layout specifications. Validate availability through authorized distributors to avoid counterfeit parts.

Selection Notes

Select this component when designing circuits requiring NPN RF amplification near 1.8 GHz. Consider the 6V voltage limit and 50mA current capacity for biasing networks. Evaluate thermal management needs given the 200mW dissipation rating. Compare S-parameters from official datasheets against system impedance requirements for optimal matching.

Part Context

This transistor belongs to the family of bipolar junction devices intended for RF use. It shares functional similarities with other medium-power RF transistors but offers specific frequency characteristics. The part is often associated with Renesas Technology Corp historical documentation, indicating its lineage in high-frequency semiconductor technology.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Verify compatibility with existing circuit designs before attempting substitution. Consult official manufacturer cross-reference lists for potential alternatives.

2SC5750-A2SC5750-A

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