2SC5752-A

Overview

The CEL 2SC5752-A is an NPN silicon RF transistor designed for medium output power amplification applications. It operates within the UHF band and is housed in a 4-pin Super Minimold package. The device provides a typical output power of 60 mW, making it suitable for low-to-medium power RF signal chains. Key electrical characteristics include a transition frequency optimized for UHF operations and a collector-emitter voltage rating compatible with standard low-voltage RF systems. The component utilizes silicon technology to ensure reliable performance in consumer and industrial radio frequency circuits.

Feature Summary

• NPN silicon construction for stable RF amplification
• Optimized for medium output power levels
• Compact 4-pin Super Minimold surface-mount packaging

Applications

• UHF-band RF power amplification stages
• Medium power signal boosting in communication modules
• Consumer electronics requiring compact RF front-ends

Procurement Notes

Verify the manufacturer source carefully, as the 2SC5752 designation originates from NEC Corporation. Ensure the supplier explicitly confirms CEL (California Eastern Labs) as the authorized distributor or re-branding entity for this specific suffix. Cross-reference the datasheet revision date to confirm technical alignment with original NEC specifications before integration into production designs.

Selection Notes

Select this component when a small-form-factor NPN silicon transistor is required for UHF amplification with moderate power output capabilities. Compare the 60 mW output specification against system requirements to ensure adequate gain without excessive heat dissipation. Evaluate the 4-pin Super Minimold footprint compatibility with existing PCB layouts and assembly equipment constraints.

Part Context

This part belongs to the broader category of silicon RF transistors used in high-frequency applications. While the 2SC5752 series is historically associated with NEC, CEL distributes equivalent or re-branded versions. It serves as a discrete solution for RF signal chain design, distinct from integrated RF ICs or GaN-based high-power devices.

Replacement Considerations

Direct substitutes include the NESG2101M16 for leadless packaging variants or other NPN SiGe transistors if material composition changes are acceptable. Verify pinout compatibility and thermal resistance parameters when replacing with generic NPN RF transistors.