2SC5753-A

Overview

The NE678M04 is a medium power NPN silicon high frequency transistor fabricated using NEC's HFT3 wafer process. It features a transition frequency of 12 GHz and operates effectively from 100 MHz to 3 GHz. The device provides an output power at the 1 dB compression point (P1dB) of 18 dBm at 1.8 GHz with low voltage and current requirements. It offers a linear gain of 13 dB at 1.8 GHz and a maximum available gain of 13.5 dB at 2 GHz. The component is housed in a low-profile M04 package, which corresponds to the SOT-343 footprint with a height of only 0.59 mm.

Feature Summary

• Utilizes NEC's HFT3 wafer process for high-frequency performance
• Features a new low-profile flat lead style M04 package
• Provides high output power suitable for driver stages
• Designed for mobile or fixed wireless applications

Applications

• Driver stage for mobile wireless applications
• Driver stage for fixed wireless applications
• RF amplification within 100 MHz to 3 GHz range

Procurement Notes

Verify the specific ordering suffix when sourcing this component. The datasheet indicates that the -A suffix designates a Pb-free device compliant with EU RoHS directives, while the -AZ suffix applies to devices containing lead but exempted from those requirements. Confirming the exact suffix ensures compliance with environmental standards and material specifications required for your assembly process.

Selection Notes

Select this transistor for applications requiring high gain bandwidth and moderate output power in a compact form factor. The device is optimized for operation at low voltages and currents, making it efficient for driver stages. Ensure the design accommodates the specific thermal resistance characteristics and the small M04 package dimensions during PCB layout and thermal management planning.

Part Context

This component is identified by the EIAJ registration number 2SC5753. It is manufactured by NEC and distributed in North America by California Eastern Laboratories (CEL). The part represents a medium power NPN silicon high frequency transistor designed for RF applications, distinct from general-purpose switching transistors due to its specialized high-frequency parameters.

Replacement Considerations

The NE678M04 is functionally equivalent to the NEC 2SC5753. When evaluating substitutes, verify that the alternative device matches the 12 GHz transition frequency, 18 dBm P1dB output power, and SOT-343/M04 package footprint to ensure compatibility with existing circuit designs.