2SC5763M

Single Bipolar Transistors Overview

The onsemi 2SC5763M is a single NPN silicon power bipolar junction transistor designed for high-voltage switching applications. It features a collector-emitter voltage rating of 400 V and a continuous collector current capacity of 7 A. The device operates with a transition frequency of 17 MHz, ensuring adequate speed for switching regulator circuits. Packaged in a TO-220AB through-hole case, it provides robust thermal performance with a maximum power dissipation of 1.75 W under specific conditions, suitable for industrial and commercial power supply designs.

Single Bipolar Transistors Feature Summary

• High voltage blocking capability rated at 400 V for robust operation in demanding environments
• Significant current handling capacity supporting up to 7 A continuous collector current
• Optimized switching speed with a transition frequency of 17 MHz for efficient regulator use

Single Bipolar Transistors Applications

• Switching regulator circuits
• Power supply output stages
• Industrial motor control systems

Single Bipolar Transistors Procurement Notes

Verify the exact suffix designation against the manufacturer's official datasheet to confirm pinout configuration and thermal characteristics. Ensure the procurement channel provides authentic components from authorized distributors to guarantee reliability. Cross-reference the package type TO-220AB with your PCB footprint requirements before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with moderate current delivery. The TO-220AB package facilitates effective heat dissipation for power management tasks. Consider the 17 MHz transition frequency to ensure compatibility with the target switching frequency of the application.

Single Bipolar Transistors Part Context

This NPN transistor belongs to the family of power discrete semiconductors intended for general-purpose switching. It complements other high-voltage devices in the portfolio by offering a balance between voltage withstand and current drive capabilities. The design supports standard through-hole mounting techniques common in legacy and industrial equipment.

Single Bipolar Transistors Replacement Considerations

Check for direct substitutes such as the 2SC5763N or 2SC5763 variants which share identical electrical specifications. Verify that any replacement maintains the same TO-220AB mechanical dimensions and pin assignment to ensure board compatibility without redesign.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The device is rated for a maximum collector-emitter voltage (V(BR)CEO) of 400 V.

Is this component suitable for surface mount assembly?

No, the 2SC5763M utilizes a TO-220AB package designed specifically for through-hole mounting.