2SC5773JR-TL-E

Overview

The 2SC5773JR-TL-E is a small signal NPN bipolar junction transistor designed for high-frequency amplifier applications. It operates with a maximum collector-emitter voltage of 6V and supports a continuous collector current of 80mA. The device features a surface-mount 3-pin MPAK package, optimized for compact circuit designs. It delivers a power dissipation rating of 700mW and functions effectively at frequencies up to 10.8GHz. This component is specifically engineered for RF signal processing tasks requiring low noise and high gain characteristics in portable electronic devices.

Feature Summary

• Optimized for high-frequency amplification in RF circuits
• Compact surface-mount packaging for space-constrained designs
• Low voltage operation suitable for portable battery-powered systems

Applications

• High-frequency amplifier stages
• RF signal processing modules
• Portable communication devices

Procurement Notes

Verify availability status directly with Renesas Electronics sales offices, as production termination may apply to specific grades. Confirm that the ordering suffix corresponds to the required tape and reel specifications. Ensure compatibility with existing design implementations before procurement, as support is limited to customers who have already adopted these products. Cross-reference part numbers to avoid substitution errors.

Selection Notes

Select this component for applications requiring NPN small-signal transistors with high-frequency performance. Consider the 6V voltage limit and 80mA current capacity when designing biasing networks. The MPAK package requires appropriate thermal management considerations due to the 700mW dissipation rating. Evaluate frequency response requirements against the 10.8GHz operational limit to ensure adequate performance margins for the intended RF application.

Part Context

This transistor belongs to the 2SC5773 series of small signal bipolar transistors manufactured by Renesas Electronics Corporation. The series is targeted at high-frequency amplifier applications within the consumer electronics and telecommunications sectors. The JR-TL-E suffix indicates specific packaging and taping configurations for automated assembly processes. This component represents a specialized solution for RF front-end designs requiring compact form factors and reliable high-frequency operation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Contact Renesas Electronics sales offices for cross-reference information or alternative component recommendations. Verify pinout compatibility and electrical parameter equivalence if considering third-party alternatives. Ensure any replacement maintains the required high-frequency performance characteristics.