2SC5775

Single Bipolar Transistors Overview

The onsemi 2SC5775 is a single NPN silicon power bipolar junction transistor designed for high-current applications. It features a maximum collector current of 12 A and a collector-emitter voltage rating of 160 V. The device exhibits a minimum DC current gain (hFE) of 35 and operates with a switching frequency up to 15 MHz. Thermal performance includes a maximum power dissipation of 2.5 W, with saturation voltage specified at 2 V under conditions of 600 mA base current and 6 A collector current. The component is housed in a TO-3PB through-hole package.

Single Bipolar Transistors Feature Summary

• High current handling capability with 12 A collector current rating
• Wide safe operating area ensuring durability against breakdown events
• Large current capacitance supporting efficient signal processing

Single Bipolar Transistors Applications

• 90 W output driver circuits
• Power amplifier stages requiring high current gain
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer source carefully, as this component is listed by multiple entities including Rochester Electronics and onsemi. Confirm the specific datasheet version matches the required electrical characteristics, particularly regarding hFE ranges and thermal resistance values. Ensure the TO-3PB package pinout aligns with the target circuit design before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN power switching with moderate voltage ratings. The 160 V breakdown voltage suits low-to-medium voltage power supplies. Consider the 2.5 W power dissipation limit and ensure adequate heatsinking is integrated into the system design to maintain safe junction temperatures during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the family of power bipolar transistors intended for audio and RF power amplification. It serves as a complementary or standalone active element in linear and switching modes. The device is engineered for reliability in environments subject to transient overloads, leveraging its wide ASO capabilities to prevent thermal runaway during fault conditions.

Single Bipolar Transistors Replacement Considerations

The 2SA2063 is documented as a related PNP counterpart within the same specification series. Verify pin compatibility and polarity requirements when substituting. No direct NPN replacements are explicitly confirmed in the provided documentation.