2SC5819(TE12L,ZF)

Single Bipolar Transistors Overview

The Toshiba 2SC5819(TE12L,ZF) is a silicon NPN epitaxial transistor designed for high-speed switching applications. It features a DC current gain ranging from 400 to 1000 at a collector current of 0.15 A, with a maximum collector-emitter saturation voltage of 0.12 V. The device supports a continuous collector current of 1.5 A and a pulse current of 2.5 A. Key electrical parameters include a collector-base voltage of 40 V, a collector-emitter voltage of 20 V, and an emitter-base voltage of 7 V. The typical fall time is 45 ns, and the collector output capacitance is 18 pF.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Low collector-emitter saturation voltage for reduced power loss
• Fast switching speed suitable for high-frequency circuits

Single Bipolar Transistors Applications

• DC-DC converter circuits
• General high-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the marking code against official datasheet specifications. Confirm package type matches JEDEC SC-62 or TOSHIBA 2-5K1A standards. Ensure compliance with intended usage guidelines, as these components are designated for general electronics rather than safety-critical systems. Review thermal derating curves for reliable operation under specific load conditions.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high current gain are required in compact designs. Consider the 20 V collector-emitter voltage limit for circuit compatibility. Evaluate thermal management requirements based on the specified junction temperature and power dissipation ratings. Verify that the operating frequency aligns with the device's fast switching characteristics.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of silicon NPN epitaxial transistors optimized for switching performance. It utilizes a small outline package suitable for surface mount assembly. The device is engineered to provide reliable performance in consumer electronics and industrial equipment where space constraints and efficiency are critical design factors.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists for verified substitutes. Ensure any alternative component matches the pin configuration, voltage ratings, and switching speeds. Verify package compatibility before implementation.