2SC5824T100Q

Single Bipolar Transistors Overview

The 2SC5824T100Q is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 3 A. The device operates with a maximum power dissipation of 2.0 W when mounted on a ceramic board, or 0.5 W under standard surface mount conditions. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 390, a transition frequency (fT) of 200 MHz, and a typical collector-emitter saturation voltage of 200 mV at 2 A. It utilizes an MPT3 (SOT-89) package.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with low saturation voltage for efficient power control.
• Strong discharge power handling designed for inductive and capacitive loads.
• Complements the 2SA2071 PNP transistor for push-pull applications.

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or R) required for your design, as the datasheet defines distinct gain ranges for each classification. Confirm that the MPT3 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the derated power dissipation limits based on ambient temperature and mounting conditions specified in the official documentation.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 3 A with moderate voltage ratings of 60 V. The 200 MHz transition frequency supports high-speed switching requirements. Consider the complementary 2SA2071 if a matched pair configuration is needed. Verify that the operating junction temperature remains within the specified -55°C to +150°C range during deployment.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5824 series of power transistors from ROHM Semiconductor. It is specifically engineered to complement the 2SA2071 PNP counterpart, facilitating balanced push-pull output stages. The device is housed in the MPT3 (SOT-89) surface-mount package, which provides a compact form factor suitable for space-constrained electronic equipment layouts.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.