2SC5876U3HZGT106Q

Single Bipolar Transistors Overview

The 2SC5876U3HZGT106Q is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 500 mA, with a power dissipation rating of 200 mW at 25°C. The device operates within a storage temperature range of -55°C to +150°C and is housed in a surface-mount SOT-323 (UMT3) package. It exhibits a transition frequency (fT) of 300 MHz and a typical turn-off time (tf) of 80 ns at IC = 500 mA.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a typical fall time of 80 ns at 500 mA collector current.
• Low saturation voltage, typically 150 mV at IC = 100 mA and IB = 10 mA.
• Strong discharge power handling for inductive and capacitive loads.
• AEC-Q101 qualified for automotive grade reliability.

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T106 against official ROHM documentation to confirm reel specifications and marking codes. Ensure that the AEC-Q101 qualification status aligns with your system's automotive requirements. Confirm that the SOT-323 package dimensions match your PCB footprint design constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high-speed switching characteristics is required. It serves as a complementary pair to the 2SA2088U3 HZG PNP transistor. Consider its 60 V breakdown voltage and 500 mA current capacity for medium-power applications where low saturation voltage improves efficiency.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5876U3 series of medium power transistors from ROHM. It is designed for surface mount assembly using the UMT3/SOT-323 package. The series is characterized by fast switching speeds and robust load handling capabilities, making it suitable for general-purpose amplification and switching tasks in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The 2SA2088U3 HZG is documented as the complementary PNP counterpart. Verify pinout compatibility and electrical parameters against alternative suppliers if cross-referencing other manufacturers' parts.

Single Bipolar Transistors FAQ

Is the 2SC5876U3HZGT106Q qualified for automotive applications?

Yes, the datasheet explicitly states that the device is AEC-Q101 qualified.

What is the typical fall time for this transistor?

The typical fall time (tf) is 80 ns when measured at a collector current of 500 mA.

Which PNP transistor complements this NPN device?

The 2SA2088U3 HZG is listed as the complementary PNP transistor in the product documentation.