2SC5880TV2R

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC5880TV2R is an NPN silicon epitaxial planar power transistor designed for high-speed switching applications. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 2 A, with a maximum power dissipation of 1.0 W. The device exhibits a low saturation voltage of typically 200 mV at IC = 1.0 A and IB = 100 mA. Key electrical parameters include a transition frequency (fT) of up to 500 MHz and a typical turn-off time (tf) of 35 ns at IC = 2 A. It is supplied in a TV2 package via taping.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a typical fall time of 35 ns at 2 A collector current.
• Low saturation voltage, typically 200 mV at IC = 1.0 A and IB = 100 mA.
• Strong discharge power handling for inductive and capacitive loads.

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TV2 against official documentation to confirm packaging details and reel specifications. Ensure compatibility with existing design requirements regarding the SOT-89-like TV2 footprint. Confirm supply status as this component may be subject to lifecycle changes or obsolescence notices from the manufacturer.

Single Bipolar Transistors Selection Notes

Select the 2SC5880TV2R when designing circuits requiring fast switching speeds combined with moderate current handling capabilities. Its low saturation voltage makes it suitable for efficient power management applications. Consider its complementary relationship with the 2SA2093 PNP transistor for push-pull configurations.

Single Bipolar Transistors Part Context

This component belongs to ROHM's discrete bipolar transistor lineup, specifically engineered for general-purpose power amplification and switching tasks. It utilizes an NPN silicon epitaxial planar structure to deliver reliable performance across a wide temperature range, supporting industrial and consumer electronics designs.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states that the 2SC5880 complements the 2SA2093. Designers should verify pinout and parameter equivalence if substituting with other NPN transistors offering similar 60V/2A ratings.

Single Bipolar Transistors FAQ

What is the typical turn-off time for the 2SC5880?

The typical turn-off time (tf) is 35 ns when measured at a collector current of 2 A.

Does the 2SC5880 support inductive load driving?

Yes, the device is designed with strong discharge power capabilities suitable for driving inductive and capacitive loads.