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Product Detailed Parameters
- Description：RF TRANS NPN 10V 2.7GHZ SSSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：2.7GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：75 @ 5mA, 4V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：SSSMini3-F1
- Grade：-
- Qualification：-
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Overview
The Panasonic 2SC5939 is a silicon NPN epitaxial planar transistor designed for high-frequency amplification, oscillation, and mixing applications. It operates with a collector-emitter voltage of 10V and a maximum collector current of 50mA. The device features a transition frequency up to 2.7GHz and low parasitic capacitance, including a collector output capacitance of 1.4pF. Packaged in the compact SSS-Mini3-F1 format, it supports automatic insertion via tape packing.
Feature Summary
- High transition frequency suitable for RF signal processing
- Low collector output and reverse transfer capacitance
- Compact SSS-Mini package enabling equipment downsizing
Applications
- High-frequency amplification circuits
- Oscillation circuit design
- Signal mixing applications
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm the specific marking symbol '1S' on the package matches the datasheet specifications. Ensure storage conditions remain within the specified temperature range to maintain junction integrity before assembly.
Selection Notes
Select this component when designing circuits requiring an NPN transistor with a minimum transition frequency of 1.4GHz. Verify that the required collector power dissipation does not exceed 100mW at the intended ambient temperature. Ensure the operating voltage remains below the 10V collector-emitter breakdown limit.
Part Context
This component belongs to the Panasonic discrete semiconductor product line, specifically categorized under small-signal bipolar transistors. It utilizes a silicon epitaxial planar structure optimized for radio frequency performance. The SSS-Mini3-F1 package is engineered for surface-mount technology integration.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching the transition frequency, package dimensions, and electrical ratings precisely to ensure functional compatibility in existing designs.
FAQ
What is the maximum transition frequency (fT) guaranteed for this transistor?
The maximum transition frequency is 2.7 GHz, measured at VCE = 4V, IE = -5mA, and f = 200 MHz.
What are the absolute maximum ratings for collector-base and emitter-base voltages?
The absolute maximum rating for collector-base voltage (Emitter open) is 15V, and for emitter-base voltage (Collector open) is 3V.
How is the forward current transfer ratio (hFE) characterized?
The minimum hFE is 75, with a typical value of 400, measured at VCE = 4V and IC = 5mA.
