2SC5964-TD-E

Single Bipolar Transistors Overview

The 2SC5964-TD-E is an NPN epitaxial planar silicon transistor manufactured by onsemi, designed for high-speed switching applications. It features a collector current capacity of 3 A and a collector-emitter voltage rating of 50 V. The device utilizes MBIT process technology to achieve low collector-to-emitter saturation voltage and large current handling capabilities. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 560 at 100 mA, a gain-bandwidth product (fT) of approximately 380 MHz, and a maximum power dissipation of 3.5 W at 25°C case temperature. It is housed in a PCP-1 (SOT-89) surface-mount package.

Single Bipolar Transistors Feature Summary

• Adoption of MBIT processes for enhanced performance
• Low collector-to-emitter saturation voltage for efficiency
• Large current capacity suitable for power switching
• High-speed switching characteristics

Single Bipolar Transistors Applications

• DC-DC converters
• Relay drivers
• Lamp drivers
• Motor drivers
• Flash circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance attributes. Confirm that the component matches the required RoHS and halogen-free specifications as defined in the manufacturer's ordering information. Cross-reference the part number with the latest data sheet revisions to validate electrical characteristics and package dimensions before integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high-speed switching with significant current handling capabilities. The low saturation voltage makes it suitable for efficient power management circuits. Ensure the thermal design accommodates the specified power dissipation limits, particularly when operating near maximum current ratings. Verify that the drive circuitry can provide sufficient base current to maintain the transistor in deep saturation during operation.

Single Bipolar Transistors Part Context

This NPN transistor belongs to a family of devices utilizing MBIT technology, often paired with complementary PNP counterparts like the 2SA2125. Designed for surface-mount assembly, it supports compact PCB layouts common in modern consumer electronics and industrial control systems. The PCP-1 package provides a balance between thermal performance and space efficiency for high-density applications.

Single Bipolar Transistors Replacement Considerations

Check for direct substitutes within the same product family or equivalent specifications from other manufacturers. Ensure any replacement maintains compatibility with the SOT-89/PCP-1 footprint and meets the required voltage, current, and switching speed parameters. Verify pinout alignment to prevent circuit damage during installation.

Single Bipolar Transistors FAQ

What is the typical gain-bandwidth product (fT) for the 2SC5964-TD-E?

The typical gain-bandwidth product is 380 MHz when measured at a collector current of 500 mA and a collector-emitter voltage of 10 V.

What is the maximum collector current rating for this device?

The continuous collector current (IC) is rated at 3 A, with a peak pulse collector current (ICP) capability of 6 A under specified conditions.

Does the 2SC5964-TD-E comply with halogen-free standards?

Yes, the datasheet lists Halogen Free Compliance as a key feature of the device.