2SC6023-TR-E

2SC6023-TR-E

$0.06
  • Description:RF TRANS NPN 3.5V 14.5GHZ 4-MCP
  • Series:-

SKU:983848fba3d3 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 3.5V 14.5GHZ 4-MCP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):3.5V
  • Frequency - Transition:14.5GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 2GHz
  • Gain:9.5dB ~ 11dB
  • Power - Max:120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 15mA, 3V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:4-MCP
  • Grade:-
  • Qualification:-

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2SC6023-TR-E

Overview

The onsemi 2SC6023-TR-E is an NPN epitaxial planar silicon transistor designed for UHF to C band low-noise amplifier and oscillator applications. It features a maximum collector-to-emitter voltage of 3.5 V and a collector current rating of 35 mA. The device achieves a typical noise figure of 1.2 dB at 2 GHz with VCE=1V and IC=5mA. Cut-off frequency specifications include 14.5 GHz typ at VCE=1V, IC=5mA, and up to 22 GHz typ at VCE=3V, IC=15mA. Forward transfer gain reaches 14 dB typ at 2 GHz under higher bias conditions. The component utilizes a 4-pin MCP4 surface-mount package.

Feature Summary

  • Engineered for ultra-high-frequency amplification in the UHF to C band spectrum.
  • Provides high cut-off frequency performance suitable for broadband signal processing.
  • Delivers low noise figure characteristics optimized for sensitive receiver front-ends.

Applications

  • UHF to C band low-noise amplifiers
  • RF oscillator circuits
  • Satellite communication systems

Procurement Notes

Verify the manufacturer designation carefully as sourcing data indicates SANYO Electric Co., Ltd. as the original producer. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure the procurement channel provides traceability to the official datasheet documentation for quality assurance purposes.

Selection Notes

Select this component when designing circuits requiring operation within a 3.5 V supply limit. Evaluate the trade-off between the 1.2 dB noise figure and the 14.5 GHz cut-off frequency based on the target operating bandwidth. Consider the 35 mA collector current constraint when determining power dissipation requirements for the intended application environment.

Part Context

This part belongs to the family of NPN epitaxial planar silicon transistors manufactured by SANYO Electric Co., Ltd. The device is specifically engineered for RF applications utilizing a 4-pin minimold surface-mount package. It serves as a discrete semiconductor solution for high-frequency signal amplification tasks.

Replacement Considerations

Consult the official SANYO Electric replacement guide or authorized distributor cross-reference lists for verified equivalent components. Do not substitute without confirming pinout compatibility and electrical parameter alignment with the original design specifications.

FAQ

What is the maximum collector-to-emitter voltage rating?

The absolute maximum rating for collector-to-emitter voltage (VCEO) is 3.5 V.

How does the cut-off frequency vary with bias conditions?

The typical cut-off frequency is 14.5 GHz at VCE=1V and IC=5mA, increasing to 22 GHz at VCE=3V and IC=15mA.

What package type is used for this transistor?

The component is housed in a 4-pin MCP4 small outline surface-mount package.

2SC6023-TR-E2SC6023-TR-E
$0.06
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