2SC6026CT-GR,L3F

$0.23

Description：TRANS NPN 50V 0.1A CST3
Series：-

SKU:411b9b74daab Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC6026CT-GR,L3F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 0.1A CST3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6026CT-GR,L3F

Description：TRANS NPN 50V 0.1A CST3
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 6V
Power - Max：100 mW
Frequency - Transition：60MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-101, SOT-883
Supplier Device Package：CST3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC6026CT-GR,L3F

2SC6026CT-GR,L3F

Single Bipolar Transistors Overview

The 2SC6026CT-GR,L3F is a single NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device operates with a transition frequency of 60 MHz and a maximum power dissipation of 150 mW. It utilizes the VESM surface-mount package, which corresponds to the SOT-723 form factor. The component supports a maximum junction temperature of 150°C and exhibits a minimum DC current gain of 200 at specified test conditions.

Single Bipolar Transistors Feature Summary

Single NPN configuration for low-frequency amplification applications
VESM surface-mount packaging for compact circuit integration
High DC current gain characteristics suitable for signal processing

Single Bipolar Transistors Applications

Low-frequency amplification circuits
General-purpose switching applications
Signal processing stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix CT against official Toshiba documentation to confirm pinout and electrical tolerances match design requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the VESM package dimensions align with PCB footprint specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a 50 V NPN transistor with 150 mA capability is required in a small surface-mount package. Consider the 60 MHz transition frequency for appropriate bandwidth needs. Evaluate thermal management requirements given the 150 mW power dissipation limit in the VESM housing.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's discrete semiconductor lineup focusing on general-purpose transistors. The 2SC series typically serves as standard replacement components in various electronic assemblies. The L3F suffix indicates lead-free plating compliant with environmental directives.