2SC6040(TPF2,Q,M)

Description：TRANS NPN 800V 1A MSTM
Series：-

SKU:ff7242ecb741 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC6040(TPF2,Q,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 800V 1A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6040(TPF2,Q,M)

Description：TRANS NPN 800V 1A MSTM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：800 V
Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 800mA
Current - Collector Cutoff (Max)：100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 100mA, 5V
Power - Max：1 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：SC-71
Supplier Device Package：MSTM
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC6040(TPF2,Q,M)

2SC6040(TPF2,Q,M)

Single Bipolar Transistors Overview

The Toshiba 2SC6040 is a silicon NPN triple diffused transistor designed for high-speed and high-voltage switching applications. It features a collector-emitter breakdown voltage of 800 V (VCES) and 410 V (VCEO), with a maximum DC collector current of 1.0 A. The device achieves a fast fall time of 0.2 μs at IC = 0.3 A. Electrical characteristics include a minimum DC current gain (hFE) of 50 to 60 depending on the operating point, and a collector-emitter saturation voltage of 1.0 V max at IC = 0.8 A. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

Triple diffused silicon construction optimized for high-speed switching performance
High breakdown voltage capability suitable for demanding power supply environments
Fast switching speed with minimal storage time for efficient operation

Single Bipolar Transistors Applications

Switching regulator circuits
DC-DC converter designs
High-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as the datasheet indicates this requires specific product-by-product confirmation. Ensure the ordering suffix matches the required lead-free finish or package variant. Confirm that the application does not involve unintended usage scenarios such as medical or aerospace equipment, which are explicitly excluded from warranty coverage.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with rapid switching speeds. The 800 V rating supports high-side switching in flyback or forward converters. Consider the thermal derating curves for continuous operation above 25 °C ambient temperature. Verify that the base drive current can support the required collector current while maintaining saturation within the specified limits.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's series of NPN triple diffused transistors engineered for robust performance in power electronics. The triple diffused process enhances reliability and switching consistency compared to standard diffusion methods. It serves as a discrete solution for medium-power conversion tasks where integrated controllers may lack sufficient voltage handling or switching flexibility.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 800 V VCES rating, 1.0 A IC limit, and TO-92 (2-7D101A) package form factor. Verify pinout compatibility and ensure equivalent hFE ranges and switching times to maintain circuit stability without redesigning the base drive network.