2SC6054J0L

Single Bipolar Transistors Overview

The Panasonic 2SC6054J0L is a silicon NPN epitaxial planar transistor designed for general amplification. It features an SS-Mini3-F1 surface-mount package and operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device provides a high forward current transfer ratio (hFE) ranging from 160 to 460 at 2 mA, with a transition frequency of 100 MHz. It is RoHS compliant and serves as the complementary component to the 2SA2174J.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) for efficient signal amplification
• SS-Mini type package enabling equipment downsizing and automatic insertion via tape packing

Single Bipolar Transistors Applications

• General amplification circuits
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm the current product lifecycle status, as maintenance or discontinuation notices may apply. Ensure compliance with RoHS directives and verify that the intended application falls within standard electronic equipment parameters rather than specialized safety-critical systems.

Single Bipolar Transistors Selection Notes

Select this component for low-power general amplification tasks requiring compact surface-mount integration. Evaluate the hFE range and saturation voltage requirements against circuit specifications. Consider thermal dissipation limits when designing for elevated ambient temperatures. Verify compatibility with the complementary PNP transistor for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SC6054 series of small-signal NPN transistors. It utilizes the SSMini3-F1 package, which is standardized for automated assembly processes. The device is engineered for use in consumer electronics and industrial control units where moderate gain and reliable switching performance are required.

Single Bipolar Transistors Replacement Considerations

The 2SA2174J is the officially documented complementary PNP transistor for this component.

Single Bipolar Transistors FAQ

What is the maximum collector power dissipation?

The maximum collector power dissipation is 125 mW at an ambient temperature of 25°C.

What marking symbol is used on the component?

The marking symbol printed on the component is '7M'.

Is this component suitable for aerospace applications?

No, the datasheet specifies that the product is intended for standard applications such as office and household equipment, not for special applications like aerospace or life support systems.